*
  –6 A,
  –12 V. RDS(ON) = 26 mΩ @ VGS =
  –4.5 V RDS(ON) = 35 mΩ @ VGS =
  –2.5 V RDS(ON) = 53 mΩ @ VGS = <.

Features
*
  –6 A,
  –12 V. RDS(ON) = 26 mΩ @ VGS =
  –4.5 V RDS(ON) = 3.

This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. Features
*
  –6 A,
  –12 V. RDS(ON) = 26 mΩ @ VGS =
 &nb.

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